Quantum Melting of Charge Order due to Frustration in Two-Dimensional Quarter-Filled Systems

The effect of geometrical frustration in a two-dimensional 1/4-filled strongly correlated electron system is studied theoretically, motivated by layered organic molecular crystals. An extended Hubbard model on the square lattice is considered, with competing nearest neighbor Coulomb interaction, V, and that of next-nearest neighbor along one of the diagonals, V', which favor different charge ordered states. Based on exact diagonalization calculations, we find a metallic phase stabilized over a broad window at V' ~ V even for large Coulomb repulsion strengths as a result of frustrating the charge ordered states. Slightly modifying the lattice geometry relevant to the actual organic compounds does not alter the results, suggesting that this `quantum melting' of charge order is a robust feature of frustrated strongly correlated 1/4-filled systems.Comment: 5 pages, 4 figures, to be published in Phys. Rev.

Strong coupling theory of the spinless charges on the triangular lattices: possibility of a new quantum liquid

We propose a new type of charge liquid state in the spinless fermion system on a triangular lattice under strong inter-site Coulomb interactions, $V$. In the strong coupling limit ($t=0$), the ground state is classical and disordered due to geometrical frustration. The introduction of small t will drive the system to a partially ordered phase which we call a "pinball liquid". A possibly long range ordered Wigner crystal solid coexist with a liquid component which are moving around them like a pinball. This liquid is dominant over wide range of filling, even away from the regular triangle, and is also realized in the hard core boson systems. Relevance to the organic theta-ET_2X is discsussed.Comment: 4pages, 7figure

Non-monotonic temperature dependent transport in graphene grown by Chemical Vapor Deposition

Temperature-dependent resistivity of graphene grown by chemical vapor deposition (CVD) is investigated. We observe in low mobility CVD graphene device a strong insulating behavior at low temperatures and a metallic behavior at high temperatures manifesting a non-monotonic in the temperature dependent resistivity.This feature is strongly affected by carrier density modulation. To understand this anomalous temperature dependence, we introduce thermal activation of charge carriers in electron-hole puddles induced by randomly distributed charged impurities. Observed temperature evolution of resistivity is then understood from the competition among thermal activation of charge carriers, temperature-dependent screening and phonon scattering effects. Our results imply that the transport property of transferred CVD-grown graphene is strongly influenced by the details of the environmentComment: 7 pages, 3 figure

Charge Ordering and Spin gap in NaV_2O_5

A possible ground state of NaV_2O_5 is proposed based on the Hartree approximation for both on-site and intersite Coulomb interactions. The results indicate that the intersite Coulomb interaction induces a zigzag type of charge disproportionation (i.e. charge ordering) along the ladders of V-ions resulting in the localized spins between neighboring ladders to form a spin gap. This new state, which is different from the spin-Peierls state so far believed, seems to be consistent with the existing experimental results.Comment: 3 pages, 4 figures, submitted to J. Phys. Soc. Jp

Formulating the Net Gain of MISO-SFN in the Presence of Self-Interferences

In this study, an analytical formula for multiple-input single-output single frequency network gain (MISO-SFNG) is investigated. To formulate the net MISO-SFNG, we derived the average signal to interference plus noise ratio (SINR) where the gain achieved by the distributed MISO diversity as a function of power imbalance is curve-fitted. Further, we analyzed the losses owing to self-interferences resulting from the delay spread and imperfect channel estimation. We verified the accuracy and effectiveness of the derived formula by comparing the measurement results with the analytical results. The derived formula helps to understand how various system factors affect the gain under a given condition. The formula can be used to evaluate the MISO-SFNG and to predict the MISO-SFN coverage in various system configurations